Radiative properties of SIMOX

Authors

Nuggehalli M. Ravindra, IEEE
Sufian Abedrabbo, New Jersey Institute of Technology
Oktay H. Gokce, New Jersey Institute of Technology
Feiming Tong, New Jersey Institute of Technology
Anamika Patel, New Jersey Institute of Technology
Rajasekhar Velagapudi, New Jersey Institute of Technology
Gary D. Williamson, SEMATECH Austin
Witold P. Maszara, IEEE

Document Type

Article

Publication Date

1-1-1998

Abstract

The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements have been performed in the temperature range of 17 to 800°C and wavelength range of 0.8 to 20 μm using a spectral emissometer. A modeling approach based on Multi-Rad, a matrix method of representing multi-layers, has been adopted to interpret the experimental data. Operating ranges of wavelength for pyrometry have been suggested for a reliable monitoring of temperature for processing SIMOX wafers. © 1998 IEEE.

Identifier

0032156537 (Scopus)

Publication Title

IEEE Transactions on Components Packaging and Manufacturing Technology Part A

External Full Text Location

https://doi.org/10.1109/95.725208

ISSN

10709886

First Page

441

Last Page

448

Issue

3

Volume

21

Recommended Citation

Ravindra, Nuggehalli M.; Abedrabbo, Sufian; Gokce, Oktay H.; Tong, Feiming; Patel, Anamika; Velagapudi, Rajasekhar; Williamson, Gary D.; and Maszara, Witold P., "Radiative properties of SIMOX" (1998). Faculty Publications. 16511.
https://digitalcommons.njit.edu/fac_pubs/16511