Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Document Type

Article

Publication Date

3-1-1999

Abstract

In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon-oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200-230 K in epitaxial wafers, and at 200-300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon-oxygen pair. The relative concentration of this defect is ∼ 10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron. © 1999 American Institute of Physics.

Identifier

0041477254 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.123519

ISSN

00036951

First Page

1263

Last Page

1265

Issue

9

Volume

74

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