Plasma process-induced band-gap modifications of a strained SiGe heterostructure

Document Type

Article

Publication Date

5-24-1999

Abstract

The effect of plasma etching and subsequent annealing on the valence-band discontinuity ΔEV at the Si/SiGe interface was investigated. Dry etched samples demonstrated a faster relaxation mechanism as compared to their wet etched counterparts. In both cry and wet etched samples as the annealing temperature increases the valence-band discontinuity is reduced and completely disappeared at higher temperature annealing. A simple technique is proposed to measure the band gap of the SiGe films by a C-V measurement using a MOS structure.

Identifier

0032606607 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.124098

ISSN

00036951

First Page

3173

Last Page

3175

Issue

21

Volume

74

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