Metal-oxide-silicon diodes on deuterium-implanted silicon substrate

Document Type

Article

Publication Date

5-22-2000

Abstract

Ion implantation was used to incorporate deuterium at the Si-SiO2 interface. Polycrystalline silicon gate metal-oxide-semiconductor diodes with 4 nm oxide grown on deuterium-implanted p-type (100) silicon substrate were investigated. It was observed that deuterium implantation at a light dose of 1 × 1014/cm2 at 25 keV reduced oxide leakage current due to reduction in oxide charge and interface traps. Low-energy implant indicates possible deuterium loss during oxidation whereas in case of higher energy implant, the observed degradation was caused by enhanced substrate damage. Interface state density Dit as obtained from the conductance measurements suggests that implanted deuterium passivates the interface traps. © 2000 American Institute of Physics.

Identifier

0041687605 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.126584

ISSN

00036951

First Page

3076

Last Page

3078

Issue

21

Volume

76

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