Rapid thermal activation and diffusion of boron and phosphorus implants
Document Type
Conference Proceeding
Publication Date
1-1-2001
Abstract
Crystalline Si was doped with high concentrations of B and P near the surface by low energy ion implantation and electrically activated by rapid thermal annealing (RTA) and the special case of spike annealing. Diffusion depths were determined by secondary ion mass spectroscopy (SIMS). Electrical activation was characterized by sheet resistance, Hall coefficient, and reverse bias diode leakage. While both species show transient enhanced diffusion (TED), electrical activation strongly increases with dose for P implants and comparatively weakly for B implants.
Identifier
84983156798 (Scopus)
Publication Title
9th International Conference on Advanced Thermal Processing of Semiconductors Rtp 2001
External Full Text Location
https://doi.org/10.1109/RTP.2001.1013770
First Page
227
Last Page
231
Recommended Citation
Fiory, A. T.; Chawda, S. G.; Madishetty, S.; Mehta, V. R.; Ravindra, N. M.; McCoy, S. P.; Lefrançois, M. E.; Bourdelle, K. K.; McKinley, J. M.; Gossmann, H. J.L.; and Agarwal, A., "Rapid thermal activation and diffusion of boron and phosphorus implants" (2001). Faculty Publications. 15383.
https://digitalcommons.njit.edu/fac_pubs/15383
