Behavior of oxygen doped SiC thin films: An x-ray photoelectron spectroscopy study

Document Type

Article

Publication Date

1-1-2001

Abstract

Thin silicon carbide films have been deposited by chemical vapor deposition on p-type (100) silicon substrates. The composition and bonds formed in these films have been analyzed by x-ray photoelectron spectroscopy (XPS) and infrared spectroscopy. The native surface oxide on the silicon carbide surface induced by air exposure has also been studied. Several phases are detected in the near-surface region: elemental Si, Si oxides (mainly SiO2), Si carbide (SiC) and Si oxicarbides (SiOxCy). Quantitative XPS analysis results indicate that, for atomic oxygen fractions <0.15, the Si-C phases are dominant in the films. Above this value no silicon oxicarbide is observed, but a multiphase material formed by elemental Si, Si oxides and Si carbides is observed. In spite of the film being a complex phase mixture, a simple relationship is found between the overall carbon and oxygen compositions. The carbon atomic fraction in the film decreases quasilinearly as the oxygen content increases, with a slope of about - 1. An overall composition of SiOxC3-x in the 0.5+n ion implantation into monocrystalline silicon is made. © 2001 American Institute of Physics.

Identifier

0000466537 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.1332796

ISSN

00218979

First Page

212

Last Page

216

Issue

1

Volume

89

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