Charge transfer in a multi-implant pinned-buried photodetector

Document Type

Article

Publication Date

5-1-2001

Abstract

This work presents a charge transfer model for a multi-implant (graded) pinned-buried photodetector for high frame rate imaging applications. The model takes into account the initial charge of each implanted region which is divided into a large number of small areas and the maximum effective transit length of the far and near electrons by taking into account the fringing field effect due to graded implants under uniform illumination condition. The model predicts 1.5 μs for a single-implant and 500 ns for a three-implant photodetector for collection of 90% of the initial charge. The computed values agree well with the experimental results for a three-implant 70 μm × 45 μm photodetector measured at a rate of 10 6 frames/s with uniformly illuminated by 100 ns LED pulses.

Identifier

0035339559 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/16.918231

ISSN

00189383

First Page

858

Last Page

862

Issue

5

Volume

48

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