Reliability of thin oxides grown on deuterium implanted silicon substrate

Authors

D. Misra, Newark College of Engineering
R. K. Jarwal, Newark College of Engineering

Document Type

Article

Publication Date

5-1-2001

Abstract

We have investigated the reliability of gate oxide with deuterium incorporated at the Si/SiO2 interface through low energy ion implantation into the silicon substrate before thin gate oxide growth. Deuterium implantation at a dose of 1 × 10¹⁴/cm² at 25 keV showed improved breakdown characteristics. Charge-to-breakdown seems to correlate well with the interface state density measured by conductance method.

Identifier

0035339726 (Scopus)

Publication Title

IEEE Transactions on Electron Devices

External Full Text Location

https://doi.org/10.1109/16.918256

ISSN

00189383

First Page

1015

Last Page

1016

Issue

5

Volume

48

Grant

9732697

Fund Ref

National Science Foundation

Recommended Citation

Misra, D. and Jarwal, R. K., "Reliability of thin oxides grown on deuterium implanted silicon substrate" (2001). Faculty Publications. 15175.
https://digitalcommons.njit.edu/fac_pubs/15175