Alternative smart-cut-like process for ultra-thin SOI fabrication

Document Type

Article

Publication Date

1-1-2002

Abstract

We describe for the first time a layer transfer caused by delamination along the hydrogen platelet layer formed by RF plasma hydrogenation at a place of end-of-range defects. The process involves first creating a buried trap layer using variously silicon, or argon implantation. Wafers thus processed with an initial implant to levels below 1016 cm-2 are then hydrogenated with RF plasma. Next steps include pre-bonding, cleavage, and post-bonding as in the Smart-cut process. The cleavage occurs at a depth corresponding to the maximum of vacancy-enriched defects (between Rp/2 and Rp). Plasma hydrogenation may be used as a step in the process of fabricating thin SOI wafers.

Identifier

0036089320 (Scopus)

Publication Title

IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings

External Full Text Location

https://doi.org/10.1109/ASMC.2002.1001564

ISSN

1523553X

First Page

6

Last Page

10

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