Electron transit time enhancement in phtodetectors for high speed imaging

Document Type

Conference Proceeding

Publication Date

1-1-2002

Abstract

to operate at a fast frame rates with high sensitivity photoelectron transport in a photodetector under uniform illumination condition is investigated. The charge readout time of the photodetector with multi-implants is modeled with both diffusion equation and continuity equations were combined. A maximum effective diffusion length was assigned to each implanted regions after taking into account the fringing field drift due to multiple implants. It was assumed that the charge on each section is directly proportional to its area under uniform illumination. The total charge transport as a function of time is obtained by the superposition of charge contribution of all implanted regions. The design effects are also investigated. The model showed excellent match with experimental results.

Identifier

84907690193 (Scopus)

ISBN

[8890084782]

Publication Title

European Solid State Device Research Conference

External Full Text Location

https://doi.org/10.1109/ESSDERC.2002.195015

ISSN

19308876

First Page

651

Last Page

654

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