A comparative study of plasma enhanced chemically vapor deposited Si-O-H and Si-N-C-H films using the environmentally benign precursor diethylsilane

Document Type

Article

Publication Date

5-1-2002

Abstract

The environmentally benign precursor diethylsilane (DES) was used with either N2O or NH3 to synthesize S-O-H or Si-N-C-H films by plasma enhanced chemical vapor deposition (PECVD). The growth rates were observed to decrease with higher temperature while increasing with total pressure. Oxide films with optimal properties were synthesized at a deposition temperature of 300 °C, total pressure of 0.3 Torr, DES flow rate of 15 sccm, and N2O/DES flow rate ratio of 16. Comparative values of refractive index, stress, hardness and Young's modulus are presented as a function of processing variables and related to film density and resulting film compositions. © 2002 Elsevier Science B.V. All rights reserved.

Identifier

0036571254 (Scopus)

Publication Title

Materials Letters

External Full Text Location

https://doi.org/10.1016/S0167-577X(01)00545-6

ISSN

0167577X

First Page

102

Last Page

107

Issue

2-3

Volume

54

Fund Ref

Nanjing Institute of Technology

This document is currently not available here.

Share

COinS