Exciton photoluminescence and energy transfer in nanocrystalline Si/ Si dioxide superlattice structures

Document Type

Conference Proceeding

Publication Date

1-1-2003

Abstract

Photoluminescence (PL) of nanocrystalline Si (nc-Si) assemblies formed by thermal crystallization of amorphous Si/SiO2 and SiO/SiO2 superlattices (SLs) has been investigated at different temperatures and excitation conditions. The low temperature resonant PL spectroscopy reveals phonon-assisted excitonic recombination. At room temperature the samples formed from a-SiO/SiO2 SLs possess relatively high PL quantum yield (∼ 1%). The PL transients have non-exponential decay, which indicates the exciton energy transfer in nc-Si ensembles. The excitonic energy of Er-doped nc-Si SL structures can be almost completely transferred to Er ions incorporated in SiO2 matrix that results in a strong emission line at 0.81 eV.

Identifier

2942648598 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/proc-789-n11.2

ISSN

02729172

First Page

227

Last Page

232

Volume

789

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