Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films

Authors

Sipeng Gu, Chinese Academy of Sciences
Lisong Hou, Chinese Academy of Sciences
Qitao Zhao, Chinese Academy of Sciences
Rui'an Huang, Chinese Academy of Sciences

Document Type

Article

Publication Date

12-1-2003

Abstract

To improve the optical storage performance, Sn was doped into Ge2Sb2Te55 phase change thin films. The optical and thermal properties of Sn-doped Ge2Sb2Te55 film were investigated. The crystal structures of the as-sputtered and the annealed films were identified by the X-ray diffraction (XRD) method. The differential scanning calorimeter (DSC) method is used to get the crystallization temperature and crystallization energy (Ea). It was found that proper Sn-doping could highly improve storage performance of the Ge2Sb2Te55 media.

Identifier

1942445310 (Scopus)

Publication Title

Chinese Optics Letters

ISSN

16717694

First Page

716

Last Page

718

Issue

12

Volume

1

Recommended Citation

Gu, Sipeng; Hou, Lisong; Zhao, Qitao; and Huang, Rui'an, "Thermal phase change and activation energy of crystallization of Ge-Sb-Te-Sn thin films" (2003). Faculty Publications. 13812.
https://digitalcommons.njit.edu/fac_pubs/13812