Time-resolved carrier tunneling in nanocrystalline silicon/amorphous silicon dioxide superlattices

Document Type

Article

Publication Date

12-22-2003

Abstract

The photocurrent kinetics and carrier transport in nanocrystalline silicon (Si)/amorphous silicon dioxide superlattices were analyzed. The superlattices with silicon nanocrystals revealed a sharp resonance in conductivity at a low applied bias. The superlattices were deposited by alternating rf magnetron sputtering and plasma oxidation. The results show that the fast photocurrent transient was associated with resonant hole tunneling throughout the Si superlattices.

Identifier

0942277727 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.1630151

ISSN

00036951

First Page

5229

Last Page

5231

Issue

25

Volume

83

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