Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy

Document Type

Article

Publication Date

5-1-2007

Abstract

The effect of high-κ dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3N4 deposition above the oxide layer which in turn was on a heavily doped p+ layer on p-type silicon. The samples exhibited similar linear transmission in the THz frequency range studied. However, when using an Ar+-ion laser as an optical pump source, differential measurements (with and without the pump source) showed that the transmission was far smaller for the high-κ dielectric HfO2 films than its conventional dielectric SiO2 counterparts, indicating the presence of large photo-generated carrier density in the p-type substrate. © 2007 IOP Publishing Ltd.

Identifier

34247463751 (Scopus)

Publication Title

Semiconductor Science and Technology

External Full Text Location

https://doi.org/10.1088/0268-1242/22/5/001

e-ISSN

13616641

ISSN

02681242

First Page

457

Last Page

463

Issue

5

Volume

22

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