Carrier transport in Ge nanowire/Si substrate heterojunctions

Authors

E. K. Lee, Newark College of Engineering
B. V. Kamenev, Newark College of Engineering
L. Tsybeskov, Newark College of Engineering
S. Sharma, Hewlett Packard Laboratories
T. I. Kamins, Hewlett Packard Laboratories

Document Type

Article

Publication Date

6-12-2007

Abstract

Low impedance and negligible conductivity temperature dependence are found for micron-long Ge nanowires (NWs) grown on (p+) Si substrates. In contrast, Ge NW/ (n+) Si substrate samples exhibit many orders of magnitude higher impedance, an exponential dependence of conductivity on temperature, current instabilities, and negative differential photoconductivity. Our experimental results are explained by a model that considers energy-band alignment and carrier transport in abrupt Ge NW/Si substrate heterojunctions. © 2007 American Institute of Physics.

Identifier

34249938033 (Scopus)

Publication Title

Journal of Applied Physics

External Full Text Location

https://doi.org/10.1063/1.2730558

ISSN

00218979

Issue

10

Volume

101

Fund Ref

National Science Foundation

Recommended Citation

Lee, E. K.; Kamenev, B. V.; Tsybeskov, L.; Sharma, S.; and Kamins, T. I., "Carrier transport in Ge nanowire/Si substrate heterojunctions" (2007). Faculty Publications. 13417.
https://digitalcommons.njit.edu/fac_pubs/13417