Progressive breakdown characteristics of high-K/metal gate stacks

Document Type

Conference Proceeding

Publication Date

9-25-2007

Abstract

Breakdown characteristics of Hf-based bigh-k dielectrics in a wide thickness range were investigated to identify the "weak link" in the gate stack and its leading breakdown mechanisms under inversion stress. A strong correlation among the growth rates of the stress leakage current, SILC, and interface trap density suggests that breakdown is triggered by trap generation in the interfacial SiO2 layer. Stress-time evolution of the differential resistance and its slope obtained from SILC data allows progressive breakdown in high-k/metal gate stacks to be identified. © 2007 IEEE.

Identifier

34548778719 (Scopus)

ISBN

[1424409195, 9781424409198]

Publication Title

Annual Proceedings Reliability Physics Symposium

External Full Text Location

https://doi.org/10.1109/RELPHY.2007.369867

ISSN

00999512

First Page

49

Last Page

54

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