Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures

Authors

E. K. Lee, Newark College of Engineering
L. Tsybeskov, Newark College of Engineering
T. I. Kamins, Hewlett Packard Laboratories

Document Type

Article

Publication Date

2-1-2008

Abstract

We find that in SiSiGe three-dimensional multilayer nanostructures, photoluminescence intensity as a function of temperature depends on the excitation intensity. The experimental results are explained using a model where electron-hole separation and nonradiative recombination is controlled by a competition between hole tunneling and thermally activated hole diffusion over the valence band energy barriers at SiSiGe heterointerfaces. © 2008 American Institute of Physics.

Identifier

38549154447 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2837184

ISSN

00036951

Issue

3

Volume

92

Fund Ref

National Science Foundation

Recommended Citation

Lee, E. K.; Tsybeskov, L.; and Kamins, T. I., "Photoluminescence thermal quenching in three-dimensional multilayer SiSiGe nanostructures" (2008). Faculty Publications. 12891.
https://digitalcommons.njit.edu/fac_pubs/12891