Bandgap bowing in BGaN thin films

Document Type

Article

Publication Date

9-15-2008

Abstract

We report on the bandgap variation in thin films of Bx Ga1-x N grown on AlN/sapphire substrates using metal-organic vapor phase epitaxy. Optical transmission, photoluminescence, and x-ray diffraction were utilized to characterize the materials' properties of the Bx Ga1-x N films. In contrast to the common expectation for the bandgap variation, which is based on the linear interpolation between the corresponding GaN and BN values, a significant bowing (C=9.2±0.5 eV) of the bandgap was observed. A decrease in the optical bandgap by 150 meV with respect to that of GaN was measured for the increase in the boron composition from 0% to 1.8%. © 2008 American Institute of Physics.

Identifier

51349157510 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.2977588

ISSN

00036951

Issue

8

Volume

93

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