TiN/HfO2/SiO2/Si gate stack breakdown: Contribution of HfO2 and interfacial SiO2 layer

Document Type

Article

Publication Date

9-22-2008

Abstract

By studying systematically the breakdown mechanisms of HfO2 and interfacial SiO2 separately in this work, we have demonstrated that defect generation in the interfacial SiO2 layer seems to be the leading breakdown mechanism in the metal/high- κ /interfacial layer/Si gate stack. The individual breakdown characteristics of HfO2, without any interfacial layer using a metal-insulator-metal capacitor, and an in situ steam-grown SiO2 metal-oxide-semiconductor capacitor with identical thicknesses and growth conditions, were compared with the gate stack characteristics. The breakdown behavior and stress-induced leakage current measurements suggest that charge trapping and stress-induced trap formation in the interfacial layer continues to be the soft spot for gate stack breakdown. © 2008 The Electrochemical Society.

Identifier

51849095449 (Scopus)

Publication Title

Journal of the Electrochemical Society

External Full Text Location

https://doi.org/10.1149/1.2956328

ISSN

00134651

First Page

G194

Last Page

G198

Issue

10

Volume

155

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