Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects
Document Type
Article
Publication Date
12-1-2008
Abstract
Three-dimensional SiGe nanostructures grown on Si (SiGe/Si) using molecular beam epitaxy or low-pressure chemical vapor deposition exhibit photoluminescence and electroluminescence in the important spectral range of 1.3-1.6 μm. At a high level of photoexcitation or carrier injection, thermal quenching of the luminescence intensity is suppressed and the previously confirmed type-II energy band alignment at Si/SiGe cluster heterointerfaces no longer controls radiative carrier recombination. Instead, a recently proposed dynamic type-I energy band alignment is found to be responsible for the strong decrease in carrier radiative lifetime and further increase in the luminescence quantum efficiency. Copyright © 2008 L. Tsybeskov et al.
Identifier
80052306055 (Scopus)
Publication Title
Advances in Optical Technologies
External Full Text Location
https://doi.org/10.1155/2008/218032
e-ISSN
16876407
ISSN
16876393
Recommended Citation
Tsybeskov, L.; Lee, E. K.; Chang, H. Y.; Kamenev, B. V.; Lockwood, D. J.; Baribeau, J. M.; and Kamins, T. I., "Three-dimensional silicon-germanium nanostructures for CMOS compatible light emitters and optical interconnects" (2008). Faculty Publications. 12550.
https://digitalcommons.njit.edu/fac_pubs/12550
