Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Document Type

Article

Publication Date

2-1-2009

Abstract

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar + ions were implanted at 300 keV. Oxygen was incorporated by O + -ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er 3+ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio. © 2008 Elsevier B.V. All rights reserved.

Identifier

58349117888 (Scopus)

Publication Title

Applied Surface Science

External Full Text Location

https://doi.org/10.1016/j.apsusc.2008.11.058

ISSN

01694332

First Page

4503

Last Page

4511

Issue

8

Volume

255

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