Negative differential resistance: Gate controlled and photoconductance enhancement in carbon nanotube intraconnects

Authors

S. W. Lee, New Jersey Institute of Technology
A. Komblit, Nokia Corporation
D. Lopez, Nokia Corporation
S. V. Rotkin, Lehigh University
A. A. Sirenko, New Jersey Institute of Technology
H. Grebel, New Jersey Institute of Technology

Document Type

Article

Publication Date

4-8-2009

Abstract

Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures. We show that even with a seemingly "ohmic" contact at zero gate voltage one observes negative differential resistance (NDR) at nonzero gate bias. Large differential photo conductance (DPC) was associated with the NDR effect raising hopes for the fabrication of novel high-speed optoelectronic devices. © 2009 American Chemical Society.

Identifier

65249102659 (Scopus)

Publication Title

Nano Letters

External Full Text Location

https://doi.org/10.1021/nl803036a

ISSN

15306984

First Page

1369

Last Page

1373

Issue

4

Volume

9

Recommended Citation

Lee, S. W.; Komblit, A.; Lopez, D.; Rotkin, S. V.; Sirenko, A. A.; and Grebel, H., "Negative differential resistance: Gate controlled and photoconductance enhancement in carbon nanotube intraconnects" (2009). Faculty Publications. 12098.
https://digitalcommons.njit.edu/fac_pubs/12098