Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion

Document Type

Article

Publication Date

5-1-2009

Abstract

Effect of temperature on time-to-breakdown (TBD) of n+-ringed n-channel MOS capacitors with atomic layer deposited TiN/HfO2 based gate stacks is studied. While interfacial layer (IL) growth condition and thickness varied the high-κ layer thickness and processing was unchanged. These devices were investigated by applying a constant voltage stress (CVS) in inversion (substrate injection) at room and elevated temperatures. For high electric fields (10-15 MV/cm) across IL, it is observed that TBD is thermally activated irrespective of IL condition. Activation energies (2-3 eV after correction), found from Arrhenius plots of TBD for different IL conditions, show good matches with those associated with field-driven thermochemical model of breakdown developed for SiO2. © 2009 Elsevier Ltd. All rights reserved.

Identifier

65449137018 (Scopus)

Publication Title

Microelectronics Reliability

External Full Text Location

https://doi.org/10.1016/j.microrel.2009.02.003

ISSN

00262714

First Page

495

Last Page

498

Issue

5

Volume

49

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