Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy

Document Type

Article

Publication Date

7-1-2009

Abstract

GaN nanodots and nanostripes with smooth sidewall surfaces have been selectively grown on 6H-SiC substrates by metal organic vapor phase epitaxy. By varying the growth reactor pressure, we have been able to grow either isolated nanostructures or laterally overgrown structures. As confirmed by the Raman scattering and X-ray diffraction techniques, the nanostructures have no influence of step bunching that occurs in the unmasked area of the continuous GaN film. The frequency shift of the E2 optical phonons shows that the residual strain in the nanostripes is relaxed compared to the continuous GaN film. © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Identifier

79251604783 (Scopus)

Publication Title

Physica Status Solidi C Current Topics in Solid State Physics

External Full Text Location

https://doi.org/10.1002/pssc.200880770

e-ISSN

16101642

ISSN

18626351

First Page

S510

Last Page

S513

Issue

SUPPL. 2

Volume

6

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