Bit storage by 360° domain walls in ferromagnetic nanorings

Document Type

Article

Publication Date

8-1-2009

Abstract

We propose a theoretical design for a magnetic memory cell, based on thin-film ferromagnetic nanorings, that can efficiently store, record, and read out information. An information bit is represented by the polarity of a stable 360° domain wall introduced into the ring. Switching between the two magnetization states is done by a current applied to a wire passing through the ring, whereby the 360° domain wall splits into two charged 180° walls, which then move to the opposite extreme of the ring to recombine into a 360° wall of the opposite polarity. © 2009 IEEE.

Identifier

68549109616 (Scopus)

Publication Title

IEEE Transactions on Magnetics

External Full Text Location

https://doi.org/10.1109/TMAG.2009.2020329

ISSN

00189464

First Page

3207

Last Page

3209

Issue

8

Volume

45

Grant

DMS-0718027

Fund Ref

National Science Foundation

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