Photoluminescence and Raman scattering in axial Si/Ge nanowire heterojunctions

Document Type

Article

Publication Date

10-12-2009

Abstract

In crystalline, dislocation-free, Si/Ge nanowire axial heterojunctions grown using the vapor-liquid-solid technique, photoluminescence and Raman spectroscopy reveal a SiGe alloy transition layer with preferential chemical composition and strain. In addition to the lattice mismatch, strain in Si/Ge nanowires is observed from a temperature dependent study to be affected by the difference in Si and Ge thermal expansion. The conclusions are supported by analytical transmission electron microscopy measurements. © 2009 American Institute of Physics.

Identifier

70349665210 (Scopus)

Publication Title

Applied Physics Letters

External Full Text Location

https://doi.org/10.1063/1.3240595

ISSN

00036951

Issue

13

Volume

95

Grant

W911F-09–1–01–89

Fund Ref

National Science Foundation

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