Gate controlled negative differential resistance and photoconductivity enhancement in carbon nanotube addressable intra-connects

Document Type

Conference Proceeding

Publication Date

11-20-2009

Abstract

Field effect transistors were fabricated using carbon nanotube (CNT) intra-connnects. The intra-connects - individual tube or a small bundle of tubes spanning across the planar electrodes - were grown by using chemical vapor deposition (CVD) precisely between very sharp metal tips on the pre-fabricated electrodes. Gate-controlled N-shaped negative differential resistance (NDR) has been demonstrated. Enhanced differential photoconductance, which was associated with NDR was observed, as well. © 2009 Materials Research Society.

Identifier

70449598232 (Scopus)

Publication Title

Materials Research Society Symposium Proceedings

ISSN

02729172

First Page

173

Last Page

177

Volume

1142

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