Bandgap-reduced p-type ZnO films by co-doping Cu and Ga for improving photoelectrochemical response

Document Type

Conference Proceeding

Publication Date

12-1-2009

Abstract

ZnO thin films are deposited in pure Ar and mixed Ar and N2 gas ambient at substrate temperature of 500°C by radio-frequency sputtering ZnO targets. All the films were deposited on fluorine-doped tin-oxide-coated glass. We find that the presence of an optimum N2-to-Ar ratio in the deposition ambient promotes the formation of well-aligned ZnO nanorods. ZnO thin films grown at 25% N2 gas flow rate promoted aligned nanorods along c-axis and exhibit significantly enhanced photoelectrochemical response, as compared to ZnO thin films grown at other N2-to-Ar gas flow ratios. Our results suggest that chamber ambient is very important for forming aligned nanostructures, which offer potential advantages for improving the efficiency of photoelectrochemical water splitting for H2 production.

Identifier

77649091183 (Scopus)

ISBN

[9781615676361]

Publication Title

Materials Science and Technology Conference and Exhibition 2009 MS and T 09

First Page

219

Last Page

228

Volume

1

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