Computer simulation of edge effects in a small-area mesa N-P junction diode
Document Type
Conference Proceeding
Publication Date
12-1-2009
Abstract
The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined. © 2009 Materials Research Society.
Identifier
74549210638 (Scopus)
ISBN
[9781605110950]
Publication Title
Materials Research Society Symposium Proceedings
ISSN
02729172
First Page
125
Last Page
130
Volume
1123
Recommended Citation
Appel, Jesse; Sopori, Bhushan; and Ravindra, N. M., "Computer simulation of edge effects in a small-area mesa N-P junction diode" (2009). Faculty Publications. 11726.
https://digitalcommons.njit.edu/fac_pubs/11726
