Investigation of electrically active defects in n-CdS/p-CdTe solar cells

Document Type

Conference Proceeding

Publication Date

1-1-2011

Abstract

Current-voltage (J-V) and Capacitance-voltage (C-V) measurements of diode devices at different temperatures and illumination intensities are used to provide valuable information about non-idealities in the pn semiconductor junction and metal-semiconductor junction. In principle, continuous monitoring of this information can be used to improve diode and solar cell performance. In this paper we characterize the n+p CdTe on CdS solar cell. The activation energy derived from the temperature dependence of our solar cell J-V curves is consistent with trap assisted tunneling being the dominant carrier transport mechanism in the pn junction. Interpretation is complicated in the particular case of thin-film CdTe, by multiple non-shallow (not fully ionized) "doping" energy levels in the CdTe band gap are in reality, which are not distinct from "trap" energy levels. We use C-V profiling to further understand the concentrations of recombination centers as well as the interplay of the double acceptor Cd vacancy and the non- shallow acceptor Cu substitute of Cd. ©The Electrochemical Society.

Identifier

84857257429 (Scopus)

ISBN

[9781566779043, 9781607682585]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/1.3628630

e-ISSN

19386737

ISSN

19385862

First Page

233

Last Page

240

Issue

4

Volume

41

This document is currently not available here.

Share

COinS