Coexisting holes and electrons in high-TC materials: Implications from normal state transport

Document Type

Article

Publication Date

2-11-2011

Abstract

Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) dc transport data reported for eight bulk-crystal and six oriented-film specimens of Yba2Cu3O 7-δ, and (ii) far-infrared Hall angle data reported for YBa2Cu3O7-δ and Bi2Sr 2CaCu2O8+δ. The electron band exhibits extremely strong scattering; the extrapolated dc residual resistivity of the electronic component is shown to be consistent with the previously observed excess thermal conductivity and excess electrodynamic conductivity at low temperature. Two-band hole-electron analysis of Hall angle data suggests that the electrons possess the greater effective mass. © 2011 Taylor & Francis.

Identifier

79551573835 (Scopus)

Publication Title

Philosophical Magazine

External Full Text Location

https://doi.org/10.1080/14786435.2010.527864

e-ISSN

14786443

ISSN

14786435

First Page

818

Last Page

840

Issue

5

Volume

91

Grant

PL-206

Fund Ref

Army Research Office

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