Investigation of progressive breakdown and non-Weibull failure distribution of high-k and SiO2 dielectric by ramp voltage stress

Document Type

Conference Proceeding

Publication Date

6-23-2011

Abstract

In this work, the progressive breakdown (PBD) phase and non-Weibull final failure distributions of multi layer high-k and SiO2 gate dielectric were investigated by voltage ramp stress (VRS) technique. A new hybrid two-stage constant voltage stress/voltage ramp stress methodology was developed to exclusively evaluate the PBD phase. Then the VRS technique was applied to investigate the non-Weibull failure distribution at a specified current (I FAIL) with large sample-size (∼1000) experiments. An excellent agreement was achieved in both cases in comparison with the conventional CVS technique, thus demonstrates that VRS is an effective technique to replace the CVS technique for investigation of post-BD and non-Weibull statistics in both SiO2 and high-k dielectrics. © 2011 IEEE.

Identifier

79959297336 (Scopus)

ISBN

[9781424491117]

Publication Title

IEEE International Reliability Physics Symposium Proceedings

External Full Text Location

https://doi.org/10.1109/IRPS.2011.5784579

ISSN

15417026

First Page

GD.2.6

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