Analytical study of thermal annealing behaviour of erbium emission in Er2O3-sol-gel silica films

Document Type

Article

Publication Date

8-10-2011

Abstract

Room-temperature 1535 nm band photoluminescence in ∼126 nm silica films (6 at% doping), produced by spin coating an Er2O3 and tetraethylorthosilicate sol-gel formulation on silicon substrates, was studied as a function of vacuum furnace annealing (500-1050 °C). Emission is strongly enhanced for annealing near 850 °C, which is shown by modelling the temperature dependence as arising from thermally activated removal of hydroxyl ions. Suitability of such a process for silicon-based applications is discussed. © 2011 IOP Publishing Ltd.

Identifier

79960862560 (Scopus)

Publication Title

Journal of Physics D Applied Physics

External Full Text Location

https://doi.org/10.1088/0022-3727/44/31/315401

e-ISSN

13616463

ISSN

00223727

Issue

31

Volume

44

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