Strain engineering and luminescence in Si/SiGe three dimensional nanostructures

Document Type

Conference Proceeding

Publication Date

12-1-2011

Abstract

Strain engineering in composition-controlled Si-Si/Ge nanocluster multilayers with high germanium content (∼ 50%) is achieved by varying thicknesses of Si/SiGe layers and studied by low temperature photoluminescence (PL) measurements. The PL spectra show reduction in strained silicon energy bandgap and a splitting presumably associated with partial removal of heavy hole-light hole degeneracy in SiGe valence band. Time-resolved PL measurements performed under different excitation wavelengths show dramatically different PL lifetimes, ranging from ∼ 2 μs to 10 ns and an unusually high PL quantum efficiency. The results are explained by using the Si/SiGe interface recombination model, which is supported by ultra-high resolution transmission and analytical electron microscopy measurements. © 2011 Materials Research Society.

Identifier

84860121353 (Scopus)

ISBN

[9781618395122]

Publication Title

Materials Research Society Symposium Proceedings

External Full Text Location

https://doi.org/10.1557/opl.2011.300

ISSN

02729172

First Page

64

Last Page

69

Volume

1305

Fund Ref

National Science Foundation

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