Si/SiGe interfaces in three-, two-, and one-dimensional nanostructures and their influence on SiGe light emission

Document Type

Conference Proceeding

Publication Date

1-1-2016

Abstract

The nature of the interfaces between SiGe nanostructures (NSs) and Si in heterostructures strongly affects carrier mobility and recombination for physical confinement in one, two, and three dimensions. The interface sharpness is influenced by many factors including growth conditions, strain, and thermal processing, which can make it difficult to attain the desired structures. This is certainly the case forNS confinement in one dimension. However, axial Si/Ge nanowire (NW) heterojunctions (HJs) with a Si/Ge NW diameter in the range 50-120 nm produce a strong PL signal associated with band-to-band electron-hole recombination at the NW HJ that is attributed to a specific interfacial SiGe alloy composition. For three-dimensional confinement, experiments show that two quite different SiGe NSs incorporated into a Si0.6Ge0.4 wavy structure exhibit an intense PL signal with a characteristic non-exponential decay time that is remarkably shorter (as much as 1000 times) than that found in conventional Si/SiGe NSs.

Identifier

85010737623 (Scopus)

ISBN

[9781623324032, 9781607687610]

Publication Title

Ecs Transactions

External Full Text Location

https://doi.org/10.1149/07234.0007ecst

e-ISSN

19385862

ISSN

19386737

First Page

7

Last Page

25

Issue

34

Volume

72

Grant

ECCS-1027770

Fund Ref

National Science Foundation

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