Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation
Document Type
Article
Publication Date
10-1-2016
Abstract
Using the first principles with local density approximation (LDA) and self-interaction-corrected local density approximation (SIC-LDA), the electronic structure of transition metal-doped copper indium sulfide chalcopyrite (CuInS2) has been calculated and the effect of low-impurity concentration on magnetic structure has been carried out for both LDA and SIC-LDA; also, the magnetic transition temperature for Cr-doped CuInS2 was reported in the concentration range of 1–6 % with LDA and SIC-LDA. It is shown that the chalcopyrite semiconductor-doped transition metals (with low concentration) exhibit a high magnetic critical temperature and half-metallic behavior that could have a significant participation in spintronic applications.
Identifier
84973617974 (Scopus)
Publication Title
Journal of Superconductivity and Novel Magnetism
External Full Text Location
https://doi.org/10.1007/s10948-016-3571-6
e-ISSN
15571947
ISSN
15571939
First Page
2629
Last Page
2634
Issue
10
Volume
29
Recommended Citation
Laghrissi, Ayoub; Salmani, El Mehdi; Benchafia, El Mostafa; Dehmani, Mustapha; Ez-Zahraouy, Hamid; and Benyoussef, Abdelilah, "Half-Metallic Behavior of Transition Metal-Doped Chalcopyrite Semiconductor: LDA and SIC-LDA Calculation" (2016). Faculty Publications. 10255.
https://digitalcommons.njit.edu/fac_pubs/10255
