Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties
Document Type
Article
Publication Date
11-1-2016
Abstract
We present a review of recent studies of inelastic light scattering spectroscopy in two types of Si/SiGe nanostructures: planar superlattices and cluster (dot) multilayers including first- and second-order Raman scattering, polarized Raman scattering and low-frequency inelastic light scattering associated with folded acoustic phonons. The results are used in semi-quantitative analysis of chemical composition, strain and thermal conductivity in these technologically important materials for electronic and optoelectronic devices.
Identifier
84979026108 (Scopus)
Publication Title
Solid State Communications
External Full Text Location
https://doi.org/10.1016/j.ssc.2016.07.008
ISSN
00381098
First Page
25
Last Page
30
Volume
245
Grant
1027770
Fund Ref
Nanjing Institute of Technology
Recommended Citation
Tsybeskov, L.; Mala, S. A.; Wang, X.; Baribeau, J. M.; Wu, X.; and Lockwood, D. J., "Inelastic light scattering spectroscopy in Si/SiGe nanostructures: Strain, chemical composition and thermal properties" (2016). Faculty Publications. 10181.
https://digitalcommons.njit.edu/fac_pubs/10181
