Document Type
Thesis
Date of Award
5-31-1983
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Roy H. Cornely
Second Advisor
Kenneth Sohn
Abstract
The dependence on annealing parameters of the electrical properties of ten micron thick, (Hg0.8,0d0.2)Te films triode-sputtered onto silicon substrates with (111) surface orientation, was studied. The films held positioned in a quartz tube were annealed for 48-54 hours in zone furnace. The film temperature was chosen to be between 230 and 350°C and the Hg pressure was varied between 36 to 620 mmHg. The annealed films were characterized on the basis of free carrier concentrations and carrier mobilities measured by the Hall-effect at temperatures between 94 and 300 degree Kelvin and with magnetic fields between 0.165 and 4.65 kilogauss.
Carrier concentrations as low as 1015 cm-3 at 103°K were obtained for films that were triode-sputtered with negative ten volt dc substrate bias and then annealed at 280°C. Without bias, films tended to be p-type even after annealing in Hg atmosphere, a result that was attributed to sputtered impurities. The sensitivity of the type mobility and carrier concentration to small changes in sputtering and annealing parameters was demonstrated. The results indicated that further optimization of these parameters should improve the electron mobility values which were not above 9,000 cm2/volt.sec. The magnetic field variation experiments showed that very low mobility is associate with mixed conduction. The effect of indium, from preannealing measurements of the films, that diffused from the contact pads into the measured central region of the Hall-effect sample during annealing was studied.
Recommended Citation
Wu, Chia-Jen, "Dependence of the conduction properties of annealed films of (Hg0.8,Cd0.2)Te on sputter deposition and annealing parameters" (1983). Theses. 3652.
https://digitalcommons.njit.edu/theses/3652
