Document Type
Thesis
Date of Award
5-31-1991
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
Roland A. Levy
Second Advisor
James M. Grow
Third Advisor
Kenneth Sohn
Fourth Advisor
Haim Grebel
Abstract
Boron nitride thin films were deposited on silicon and fused quartz substrates by low pressure chemical vapor deposition using liquid precursor source consisting of Triethyl amine borane complex over a temperature range of 600-900°C. In the range of 600-800°C, the deposition rate, measured at a constant pressure of 0.35 Torr and flow rate of 30 sccm, was observed to follow an Arrhenius behavior yielding an activation energy of 11 kcal/mol. In the temperature range of 800-900°C, the addition of ammonia to Triethylamineborane complex produced films that are stoichiometric, as estimated by RBS measurements, and hydrogen free as determined by Infrared measurements. An increased nitrogen content in the film with the addition ammonia at a constant temperature of 650°C, pressure of 0.6 Torr, and flow rate of 30 sccm of the amine complex, results in a pronounced change in the observed stress from highly tensile to compressive as evidenced by associated cracking with progressive gain in optical transmission. Infrared spectra of the films for the investigated temperature range showed a wide absorption peak centered around 1380 cm-1 and a sharp absorption peak around 800 cm-1. The refractive index was found to be around 1.76. X-ray diffraction measurements indicated that the films were in all cases amorphous. The effects of deposition parameters, namely temperature, flow rate, pressure, and silicon addditives, on the kinetics of film growth, composition, and properties were examined. Attempts to make BN membranes were successful.
Recommended Citation
Paturi, Venkat, "Synthesis and characterization of boron nitride masks for x-ray lithography" (1991). Theses. 2582.
https://digitalcommons.njit.edu/theses/2582
