Electrical characterization of preoxide growth fluorine incorporated thin SiO2 films

Author

Nilay J. Patel, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

8-30-1991

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Kenneth Sohn

Third Advisor

S. Pandey

Abstract

Analyses of electrical characterization, of thin SiO₂ films grown on virgin and etched silicon surfaces, are presented here. The characterization techniques employed in these experiments are High Frequency Capacitance-Voltage (C-V), Capacitance-Time (C-T) & MOS Doping Profile and Static & Dynamic Current-Voltage (I-V) measurements. The structures, with areas ranging from 0.001-0.05 cm², used in this study are Al/Poly/SiO₂/Si/Al capacitors fabricated on virgin and C₂F₆ CHF₃ + He plasma exposed n-Si substrates. In this experiment, we have studied the effect of sacrificial oxidation. In this step, the oxide is thermally grown on the etched substrate, then it is wet etched to strip the oxide and subsequently gate oxide grown. It has been shown that after the exposure to the plasma and subsequent growth of oxide, fluorine gets incorporated with the oxide modifying the electrical characteristics.

Based on the experimental results of the C-V and C-T analysis we do see significant changes in the values of the C-V parameters obtained for the plasma exposed devices as compared to the control ones. The lifetime values obtained from the C-T analysis do not show significant variations. This could be attributed to the exposure of the substrate to several high temperature processes during the fabrication of the MOS devices.

Static and dynamic (TDDB) measurement techniques have been used in the I-V analysis. The measurements were performed at a standard test current of 1 μA. It has been noted from the analyses that, the devices, that have seen sacrificial oxide have much better oxide integrity and follow a consistent trend in the measured parameters.

Recommended Citation

Patel, Nilay J., "Electrical characterization of preoxide growth fluorine incorporated thin SiO2 films" (1991). Theses. 2580.
https://digitalcommons.njit.edu/theses/2580