Studies of electrical properties of SiO2 /InP system

Author

Milind S. Patel, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

8-30-1991

Degree Name

Master of Science in Electrical Engineering - (M.S.)

Department

Electrical and Computer Engineering

First Advisor

N. M. Ravindra

Second Advisor

Kenneth Sohn

Third Advisor

Durgamadhab Misra

Abstract

Analyses of Electrical characteristics, of TilAu/SiO₂1InP structures, are presented here. The (MIS) Metal-Insulator- Semiconductor capacitors were fabricated with oxide thickness of 195nm, 420nm and 610nm respectively. The SiO₂ films were deposited on n-type Indium Phosphide(/nP) using Rapid Thermal Chemical Vapor Deposition (RTCVD). The characterization techniques employed in these experiments were (I-V) Current Voltage and High Frequency Capacitance Voltage (C-V) techniques. The electrical parameters obtained from the I-V and C-V measurements have been discussed here.

Recommended Citation

Patel, Milind S., "Studies of electrical properties of SiO2 /InP system" (1991). Theses. 2579.
https://digitalcommons.njit.edu/theses/2579