Document Type
Thesis
Date of Award
10-31-1993
Degree Name
Master of Science in Materials Science and Engineering - (M.S.)
Department
Committee for the Interdisciplinary Program in Materials Science and Engineering
First Advisor
Haim Grebel
Second Advisor
Martin J. Levy
Third Advisor
David S. Kristol
Abstract
The performance of high speed optoelectronic and microelectronic devices largely depends on the uniqueness and development of the fabrication technology. Laser ablation has proven to be an effective three dimensional surface patterning technology. In this thesis, we present findings on the patterning of semiconductor surfaces using laser ablation in air as well as in solutions.
In this thesis, we suggest that the depth of a pattern induced on silicon by firing a pulsed excimer laser in air varies almost linearly with the number of pulses. We report that a He-Ne laser as a background light source has virtually little or no effect on the etching rate. We also suggest that a background light enhances the etching process induced by the excimer laser in wet chemical etching when using a thin-film cell configuration. Pattern depth profiles have been measured by scanning electron microscopy (SEM). We verify our SEM findings by using a light diffraction measurement technique. Finally, we report on the effect of patterning on the electrical properties of metal-semiconductor contacts. Schottky barriers measured for grooved surface showed, in general, a decrease in the barrier height.
Recommended Citation
Gayen, Taposh Kumar, "Laser ablation of silicon surfaces : the effects of a low level background light" (1993). Theses. 1756.
https://digitalcommons.njit.edu/theses/1756
