Date of Award
Master of Science in Materials Science and Engineering - (M.S.)
Committee for the Interdisciplinary Program in Materials Science and Engineering
Roland A. Levy
John Francis Federici
The magnetic field sensor is produced from III-V group semiconductor materials. The structure is designed for molecular beam epitaxy growth technique (MBE) on the semiinsulating InP substrate. The sensitive element is the In0.75Ga0.25As/In0.52Al0.48As heterostructure. The sensor uses the classic Hall effect in two-dimension electron gas (2DEG) formed at pseudomorphic strained epilayer of In0.75Ga0.25As. Properties of the 2DEG are preferential for the Hall effect sensor performance. Comparatively to bulk, electron mobility is higher. The device combines high magnetic field sensitivity and temperature stability. The sensor is designed for operation at room temperatures that makes it potentially useful in various practical applications.
Mitrofanov, Oleg, "The In0.75Ga0.25As/In0.52Al0.48As/InP hall effect magnetic field sensor" (1997). Theses. 943.