Date of Award

Fall 1997

Document Type

Thesis

Degree Name

Master of Science in Chemical Engineering - (M.S.)

Department

Chemical Engineering, Chemistry and Environmental Science

First Advisor

Roland A. Levy

Second Advisor

Gary S. Tompa

Third Advisor

S. A. Korenev

Abstract

Carbon nitride films were synthesized on silicon substrate by reactive magnetron sputtering of graphite target in an environment of Ar and nitrogen gas. The performance of a negative carbon ion source was also investigated to use the source in negative ion-beam-assisted deposition. These films were synthesized at room temperature at a constant pressure of 5 mtorr and at 300 Watts R.17 power, but at different composition of nitrogen in Ar-N2 gas mixture ranging from 0-53 percent. The films deposited were microscopically smooth, amorphous and their properties found to be varied with nitrogen composition in plasma. The deposition rate was observed to increase with RP power and decrease with chamber pressure. Flux of charged species toward the substrate was also seen to increase with RE power but relatively less sensitive to chamber pressure. The scratch resistance of the film was found In be 0.35 N fit 23 percent nitrogen in plasma and increased with higher nitrogen composition. The microhardness of the film was measure to be about 14 GPa at 23 percent nitrogen composition in plasma was observed to decrease with higher nitrogen composition.

Share

COinS