Electrical, electronic and optical properties of MoSe2 and WSe2

Author

Sushant Shashikant Rassay, New Jersey Institute of Technology

Document Type

Thesis

Date of Award

Fall 1-31-2017

Degree Name

Master of Science in Materials Science and Engineering - (M.S.)

Department

Committee for the Interdisciplinary Program in Materials Science and Engineering

First Advisor

N. M. Ravindra

Second Advisor

Yuanwei Zhang

Third Advisor

Michael Jaffe

Abstract

Transition-metal dichalcogenides (TMDC) crystals have emerged as a new class of semiconductors that display distinctive properties at monolayer thickness. Their electrical, electronic and optical properties are of particular interest and importance for applications in optoelectronics as light emitters, detectors, and photovoltaic devices. Monolayer MoSe₂ and WSe₂ have an intrinsic band-gap in the visible region of the solar spectrum (400nm - 700nm) which makes them distinct from other 2-D materials like graphene.

In this study, the electrical, electronic and optical properties of monolayer and bulk MoSe₂ and WSe₂ are studied. The electronic band structures are presented for monolayer and bulk MoSe₂ and WSe₂. The optical properties of MoSe₂ and WSe₂ comprises of the determination and analysis of the spectral properties of these materials, at monolayer and bulk, in the range of 1.50 - 3.0 eV by MATLAB simulations. The optical band gaps of TMDC monolayers have been simulated from their spectral dependence of the absorption coefficient. The optical properties of these materials on silicon, gold and fused silica substrates are simulated.

Recommended Citation

Rassay, Sushant Shashikant, "Electrical, electronic and optical properties of MoSe2 and WSe2" (2017). Theses. 8.
https://digitalcommons.njit.edu/theses/8