Document Type
Thesis
Date of Award
5-31-1988
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Kenneth Sohn
Second Advisor
Roy H. Cornely
Third Advisor
W. H. Warren Ball
Abstract
Silicon nitride thin films were deposited by r.f. reactive sputtering of silicon in nitrogen and argon discharge. Biased and unbiased modes of diode mode sputtering were used. Typical parameters for a sputter deposition run were: base pressure, 1-2x10-6 torr; sputtering pressure, 5-7 mtorr; nitrogen partial pressure, 15-16%; cathode-anode gap, 4 inch; r.f. power, 200-250 watts; cathode voltage, 1.8-2.1 V r.f.; water vapor pressure, 20-30% of the base pressure. The film thickness and the refractive index were measured by ellipsometery. The films of thickness 300-2500A, refractive index 1.9-2.1 and resistivity 10101Ω — cm were obtained. The deposition rate was in the range of 20-60A/min depending on the sputtering pressure and the partial pressure of nitrogen. In the case of sputtering without substrate bias, the film thickness varied, from sample to sample and on the same sample, by 50-100A and refractive index by 0.05-0.1. In the case of biased sputtering, the film thickness varied by 10-20A and refractive index by 0.01-0.02. The etch rate in the BHF varied from 10-35A/min. The effects of the sputtering parameters on the sputtered film properties were investigated. The quality of the silicon nitride films is found to be strongly dependent on the sputtering pressure, the partial pressure of nitrogen and the power density.
Recommended Citation
Shah, Divyang Manharlal, "An investigation of electrical and physical properties of reactively, diode sputtered silicon nitride thin films" (1988). Theses. 3206.
https://digitalcommons.njit.edu/theses/3206
