Document Type
Thesis
Date of Award
9-30-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
N. M. Ravindra
Second Advisor
Kenneth Sohn
Third Advisor
Durgamadhab Misra
Abstract
In recent years, investigations on polysilicon grain structures have shown that all polysilicon films by LPCVD which are most used in today's integrated circuits are columnar in structure. In this work, a square columnar grain structure has been considered to model electrical properties of polycrystalline silicon films instead of all previous one-dimensional grain structure models. By solving Poisson's equation with certain boundary conditions, we find that the barrier height at the corners of the grain is lower than that in the one-dimensional case. Assuming the trapping state energy level as constant, we also find that this level has a value higher than that in the one-dimensional case. The average carrier concentration in the columnar grain structure is lower than that in the one-dimensional case because both charge-depletion regions in vertical and horizontal to carrier movement direction are to he considered. In our model, we obtain the empirical parameters f and n to be closer to one. f and n are parameters that make theoretical results fit better with experimental data. For a more precise model, f and n are closer to one.
Recommended Citation
Wang, Yunsheng, "Modeling and analysis of electrical properties of polycrystalline silicon films" (1990). Theses. 2991.
https://digitalcommons.njit.edu/theses/2991
