Document Type
Thesis
Date of Award
5-31-1990
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical and Computer Engineering
First Advisor
N. M. Ravindra
Second Advisor
William N. Carr
Third Advisor
Raj Pratap Misra
Abstract
Analyses of temperature dependent current-voltage characteristics, of titanium silicide films on n+/p silicon shallow junctions, has been presented here. The fabrication technique involves the formation of shallow pn junctions, by ion-implantation of As+ through titanium films evaporated on P type silicon. The improvement of the activation of dopants has been fulfilled by different annealing processes in conjunction with the dopant drive-in. Electrical measurement of temperature dependent current-voltage technique has been employed to characterize these devices. The temperature dependent factors such as energy bandgap narrowing, majority carrier degeneracy, diffusivities, mobilities and minority carrier life time are evaluated by using key approximations.
Recommended Citation
Shah, Bhupendra M., "Temperature dependent current-voltage characteristics of TiSi2/n+/p silicon shallow junctions" (1990). Theses. 2918.
https://digitalcommons.njit.edu/theses/2918
