Document Type
Thesis
Date of Award
5-31-1989
Degree Name
Master of Science in Electrical Engineering - (M.S.)
Department
Electrical Engineering
First Advisor
Marek Sosnowski
Second Advisor
Roy H. Cornely
Third Advisor
Roy H. Cornely
Abstract
This thesis is divided into two parts. The first part investigates the Ionized Cluster Beam( ICB ) technique through measurements of the energy of ionized gallium beam. The presence of ions and their kinetic energy in the ICB technique is advantageous in the formation process of thin film. The results of retarding potential measurement are comparable with the presence of clusters as large as 500 atoms. The second part examines the formation of gallium nitride thin film. In order to enhance the reaction of gallium and nitrogen, dissociation of molecular nitrogen by microwave discharge method was used to generate atomic nitrogen. With a combination of the ionized cluster beam deposition technique and the microwave discharge dissociation method, the reaction of gallium and nitrogen on glass and Si (111) substrates was investigated. Ionization of the gallium beam and nitrogen background gas as well as the presence of atomic nitrogen were found to be effective in the formation of gallium nitride thin film.
Recommended Citation
Sheen, Jyh, "Study of ionized cluster beam techniques for reactive deposition of gallium nitride thin films" (1989). Theses. 2894.
https://digitalcommons.njit.edu/theses/2894
